- Physical Sciences
Ralph Gay, Cleanroom Manager
+34 943574015
r.gay@nanogune.eu
The nanoGUNE cleanroom is dedicated to fabricate and characterize the properties of materials on the nanoscale. The cleanroom is approximately a 300m2 laboratory and contains an acoustically damped room for eBeam lithography processes.
The classification of the nanoGUNE cleanroom is ISO 5 (class 100), ISO 6 (class 1000), and ISO 7 (class 10000). The air purity is under strict supervision within the cleanroom. Air quality is controlled by Filter Fan Units except for the eBeam lithography room that has a dedicated air-handling unit.
Equipment
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EBEAM lithography room:
Classification: ISO 5 and ISO 6
Research activities: Fabrication of nanoscale structures and nanoscale imagine.
Equipment: RAITH150TWO and Raith e-LiNE+
Lighting: Yellow
Equipment
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Electron-Beam lithography (RAITH-150-TWO/e-line): E-Beam Lithography used for design and nanostructure fabrication.
Electron beam column and optics:
- Electron source: Schottky field emitter ZrO/W.
- Beam energy range: 100 V to 30 kV in 10 V steps.
- Beam current range: 5 pA – 20 nA
- Beam size (Gaussian beam):
- 2 nm at 20 kV at 3 mm working distance.
- nm at 1 kV at 3 mm working distance.
- Deflection system with writing field size range: from 0.5 µm up to 2 mm
- Laser interferometer controlled stage (res. 2 nm, repeatability <<50 nm)
- Aperture: 7 to 120 μm
- 20 MHz high speed pattern generation
- Automated height sensing
- Minimum feature size ≤ 20 nm.
- Possibility to pattern areas of up to 4” wafers
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Direct laser writer
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Photo bay
- Classification: ISO 5 and ISO 6
- Research activities: Optical lithography, nano-scale fabrication.
- Equipment: EVG mask aligner, chemical wet benches, various ovens, plasma asher, microscopes
- Lighting: Yellow
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Mask aligner (EVG)
Technical characteristics
- Possibility of contact and proximity optical lithography process
- Easily minimum size achievable of 5 μm
- Possibility to pattern areas of up to 4” wafers
- Wide range of mask types
- UV lamp (15 mW /cm2)
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Ramgraber wet benches
- 5 wet benches: 2 acid wet benches, 2 solvents wet benches and 1 basis wet bench.
- Ultrasonic bath sonicators with variable power and temperature
- Spin coaters maximum 8000 rpm (4” substrates)
- Hot plates maximum temperature 300 ºC (4” substrates)
- Pure N2 gas guns
- DI water guns
- Overflow sinks
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Double pack oven, 650ºC unitemp RSO-650-200
- Two quartz glass process chambers with integrated gas in- and outlet
- Top and bottom heating
- Maximum Temperature: 650ºC
- Ramp up rate: 75ºC/s
- Loading area (2x quartz tray): 170 mm x 200 mm
- Vacuum for external pump system (up to 1x10-3 mbar)
- Controller: fast PID temperature process controller, 100 steps programmable (temperature steps), free programmable process gas flow
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Etching bay
- Classification: ISO 7
- Research activities: Wet and dry etching operations and nanoscale fabrication.
- Equipment: Ion miller, RIE, critical point dryer, chemical wet benches, ALD.
- Lighting: White
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Ion beam etcher (4wave)
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Ald cambridge nanotech savannah S100: Atomic Layer Depostion (ALD ), Evaporation thecnique for deposition of wide variety of materials (Al2O3, HfO2, ZnO, TiO2 and other oxides, nitrides and metals) on flat substrates (e.g. Si wafer) or high aspect ratio substrates (porous foams, fibers….)
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Reactive ion etcher (RIE Oxford Plasmalab 80 PLUS): System for etching/milling material by a chemically reactive gases
Technical characteristics
- Possibility to use different gasses, such as, oxygen (O2), tetrafluoromethane (CF4), trifluoromethane (CHF3) and sulfur hexafluoride (SF6).
- 5 - 500 mTorr operating pressures.
- Sample holder: 8” compatible
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Deposition bay
- Classification: ISO 7.
- Research activities: Growth of nanoscale film and multilayer structures, nanoscale material characterization.
- Equipment: eBeam and thermal evaporators, sputter systems, 4 point probe, profilometer, elipsometer, microscopes.
- Lighting: White.
Equipment
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UHV sputtering system (AJA INT.): We have two UHV Magnetron Sputtering system for high quality single or multiple layer thin film growth, one in the cleanroom and another one in the Deposition Laboratory.
- Confocal 7 magnetron sputtering guns (DC / RF)
- RF bias available
- Base pressure 10-8 Torr
- Sample holder: 4” compatible and possibility to heat (up to 850 °C) or cool the sample (liquid nitrogen cooler)
- Reactive gasses: nitrogen and oxygen
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e-beam and thermal evaporation - Lesker: E-beam/Thermal Evaporator for single or multiple layer thin film growth
- Multi pocket e-beam and thermal evaporation.
- Deposited thickness control by quartz crystal monitor.
- Deposition pressure of 10-6 - 10-7 mbar.
- Sample holder: 4” compatible and possibility to heat up to 350 °C
Equipment
- Oerlikon - UNIVEX 350 / EPVD75 Kurt J. Lesker
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Spectroscopic ellipsometrer (GES5 spectroscopic-ellipsometer SEMILAB): Measures a wide range of layer thicknesses and material optical properties in a non-destructive manner.
- Wavelength from 230 to 900 nm.
- Possibility to measure at different incidence angles (from 40° to 77°).
- Automatic multipoint measurements using a xy sample stage automatic movement.
- Optional spectroscopic photometry (transmittance and reflectance) measurements.
- Specialized software to analyze and extract optical information with a broad range material data-base.
CIC nanoGUNE
Tolosa Hiribidea, 76, E-20018 Donostia / San Sebastián
