nanoGUNE facilities

Infraestructuras
Áreas de investigación
  • Physical Sciences
Contacto

+34 943 574 000
nano@nanogune.eu

¿Disponible para usuarios externos?
Yes
Descripción

The nanoGUNE infrastructure was envisioned to fabricate nanoscale materials and characterize their properties on the nanometer scale and with sufficiently high sensitivity. Thus, it was built on the basis of sophisticated architectural and engineering solutions to create a unique environment, free of electromagnetic interference (EMI) and with an ultralow level of vibration.

Localización

Tolosa Hibilbidea, 76
E-20018 Donostia – San Sebastian

Equipamiento

Ion beam etching and sputtering system.
4WAVE
AFM/MFM microscope with both temperature control up to 250 ºC and in-situ magnetic field. Related Applications: - Devices based on magnetic nanostructures for lab on a chip bio-medical applications - Latex film coalescence - Magneto-plasmonic metamaterials for ultrasensitive and label-free molecular level detection
AFM 5500 AGILENT/NANO OBSERVER CSI INSTRUMENTS
X-ray diffraction for enabling wide-ranging structural characterizations such as layer crystallinity, grain size analysis, epitaxial relations, layer thickness and interface intermixing, allowing for the optimization of sample preparation conditions and layering sequences.
X-Ray Reflectivity/Diffractometry
Magnetic field measurement system with a temperature range of 2-400 K, magnetic fields up to 7 Tesla and resolution of 10-8 emu in magnetic moment.
QUANTUM DESIGN SQUID-VSM EVERCOOL
Physical properties measurement system with a temperature range of 2-300 K, and magnetic fields up to 9 Tesla.
QUANTUM DESIGN PPMS
MOKE instrument with the ability to detect rotations of the polarization as small as 10 nanoradiants for measurements of in-plane as well as out-of-plane magnetization. Magneto-optical spectrometer Magneto-optical magnetometer
Kerr microscopy for the study of lateral magnetization states with about 0.5 μm resolution.
UHV Magnetron Sputtering system for high quality single or multiple layer thin film growth. - Confocal 7 magnetron sputtering guns (DC / RF) - RF bias available - Base pressure 10-8 Torr - Sample holder: 4” compatible and possibility to heat (up to 850 °C) or cool the sample (liquid nitrogen cooler) - Reactive gasses: nitrogen and oxygen
ATC Series AJA SPUTTERING SYSTEM
E-beam/Thermal Evaporator for single or multiple layer thin film growth - Multi pocket e-beam and thermal evaporation. - Deposited thickness control by quartz crystal monitor. - Deposition pressure of 10-6 - 10-7 mbar. - Sample holder: 4” compatible and possibility to heat up to 350 °C
OERLIKON - UNIVEX 350 / EPVD75 KURT J. LESKER
Atomic Layer Depostion (ALD ), Evaporation thecnique for deposition of wide variety of materials (Al2O3, HfO2, ZnO, TiO2 and other oxides, nitrides and metals) on flat substrates (e.g. Si wafer) or high aspect ratio substrates (porous foams, fibers….) ''Exposure mode'’ for deposition of conformal and uniform films on substrates with ultra high aspect ratios, greater than 2000:1 ''Continuous mode'' for perfectly dense, uniform and conformal films. 4 precursor sources (heated up to 150 ºC) and option of using O3 Sample holder: 4” compatible and possibility to heat up to 300 °C
ALD CAMBRIDGE NANOTECH SAVANNAH S100
Table top basic sputtering for thin film growth of metals for basic coatings or contact fabrication - Magnetron sputtering (DC power supply) - Carbon rod evaporation head insert for carbon coating. - Glow discharge attachment for surface modification or wetting - Variable angle ‘Rota-cota’ rotatory planetary stage (diameter 50 mm ) - Sample holder: 4” compatible
LEICA EM MED020 / QUORUM TECHNOLOGIES Q150 T ES
E-Beam Lithography used for design and nanostructure fabrication. Electron beam column and optics: Electron source: Schottky field emitter ZrO/W. Beam energy range: 100 V to 30 kV in 10 V steps. Beam current range: 5 pA – 20 nA. Beam size (Gaussian beam): - 2 nm at 20 kV at 3 mm working distance. - nm at 1 kV at 3 mm working distance. Deflection system with writing field size range: from 0.5 µm up to 2 mm Laser interferometer controlled stage (res. 2 nm, repeatability <<50 nm) Aperture: 7 to 120 μm 20 MHz high speed pattern generation Automated height sensing Minimum feature size ≤ 20 nm. Possibility to pattern areas of up to 4” wafers
RAITH -150-TWO / E-LINE
Focused Ion Beam (FIB) and Focused electron/ion beam induced deposition (FE(I)BID), system used for surface patterning and complex structures fabrication. High tension electron column 50 V - 30 kV High tension Ga-column 0.5 kV – 30 kV Electron column resolution 0.5 nm at 15 kV and 0.8 nm at 1 kV (STEM) FIB milling resolution 10 nm at 30 kV GIS percursor for FE(I)BID: platinum, silicon oxide, gold, tungsten, cobalt Nanomanipulator with microgripper (Kleindiek) LN2 cooling stage (CryoMat ) EDX silicon drift detectors for elemental analysis (EDAX) Detectors: ETD SE, True in-Lens Detector (TLD), STEM II detector, High performance Ion Conversion and Electron (ICE), Concentric Back Scatter (CBS) detector iFast software for advanced Dual Beam automation in order to automate the imaging and nanofabrication MAPSTM for automatic acquisition of extra large images with high resolution AutoSlice&ViewTM software for 3D imaging by sequential sectioning of the sample
FEI HELIOS NANOLAB / FEI HELIOS 450S
Optical Lithography for microstructure fabrication. Possibility of contact and proximity optical lithography process Easily minimum size achievable of 5 μm Possibility to pattern areas of up to 4” wafers Wide range of mask types UV lamp (15 mW /cm2)
EVG
ESEM provides access to studies of wet biological samples, nano-bio composites and nano-fluidic phenomena. Studies of real-time redox chemistry involving nano-objects and the imaging of fluids under microfluidic conditions are some of the topics, in which the ESEM is playing a key role. High tension 0.5 kV – 30 kV Schottky field emitter gun Electron beam resolution 2.5 nm at 30 kV (BSE, high vacuum) Electron beam resolution 1 nm at 30 kV (SE, high vacuum) Working chamber pressure (H2O or auxiliary gas) 10-4 Pa – 4000 Pa EDX silicon drift detector (EDAX) Detectors: ETD SE detector, BS Si detector (BSE), Large Field Gaseous, SE detector (LFD), Gaseous SE detector (GSED), Gaseous BS detector (GBSD) Peltier stage (-25 °C − +55 °C) Nanomanipulator with microinjection (Kleindiek)
ESEM-FEI QUANTA 250
High tension: 60 kV – 300 kV High-brightness XFEG gun Point resolution 0.08 nm Imaging side Cs corrector Detectors: HAADF detector (Fishione), BF, ADF and HAADF detectors (Gatan) Pre- and post- GIF 2 k x 2 k CCD ultrascan cameras (Gatan) EDX RTEM (EDAX) detector for x-ray analysis Lorentz lens Biprism Possibility to heat the sample in-situ (up to 1200 ºC)
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ltra-Low-Temperature (4.8 K) Ultra-High-Vacuum Scanning Tunneling and Atomic Force Microscope (STM-AFM). It has a light emission spectroscopy set-up. It is used for molecular optoelectronics, light-emission in tunneling microscopy studies, and measurements of forces and interactions at the atomic scale. Scanning tunneling microscope (STM) Non-contact atomic force microscope (nc-AFM) Ultra-High Vacuum Light spectroscopy Base temperature 4.8 K
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Ultra-Low-Temperature (1.1 K) Ultra-High-Vacuum Scanning Tunneling and Atomic Force Microscope (STM-AFM). It has a 3T Magnetic Field. It is used for atomic manipulation, atomic and molecular magnetism studies, and research on physics at surfaces of functional materials. Scanning tunneling microscope (STM) Non-contact atomic force microscope (nc-AFM) Ultra-High Vacuum 3T Magnetic Field Base temperature 1.1 K
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he NeaSNOM from Neaspec GmbH is a combined scattering-type scanning near-field optical microscope (s-SNOM) and nanoscale Fourier transform infrared spectroscopy (nano-FTIR) system. It enables imaging and spectroscopy in the visible, infrared and terahertz spectral regions at a spatial resolution of about 10 nm. Applications include studies of local chemical, structural and electronic properties of organic and anorganic samples, as well as the mapping of electromagnetic near-field distributions of nanophotonic and plasmonic structures. s-SNOM is based on atomic force microscopy (AFM). For dielectric mapping, a metallic AFM tip is illuminated with a focused laser beam and the light elastically scattered from the tip is detected simultaneously to topography. Acting as an optical antenna, the tip converts the incident light into a strongly confined near-field spot (nanofocus) at the tip apex, which locally illuminates the sample surface. Because of the strong optical near-field interaction between tip and sample, the elastically scattered light contains information about the local optical properties of the sample surface. Thus, by recording the scattered light - while scanning the sample - the local dielectric properties can be mapped. The spatial resolution is determined by size of the nanofocus, which essentially depends on radius of the tip apex, typically in the range of 10 to 30 nm. nano-FTIR studies are performed by illuminating the tip with broadband infrared radiation and subsequent Fourier transform spectroscopy of the scattered light.
NeaSNOM - Neaspec GmbH
One of the home-built electrospinning setups. High speed camera (750000 frames per second) Photron Various high voltage sources
Home-built